Novel quantum dot gate FETs and nonvolatile memories using lattice-matched ii-vi gate insulators

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1574-1578

  Jain, F C ^a   Suarez, E ^a   Gogna, M ^a   Alamoody, F ^a   Butkiewicus, D ^a   Hohner, R ^a   Liaskas, T ^a   Karmakar, S ^a   Chan, P Y ^a   Miller, B ^a   Chandy, J ^a   Heller, E ^a,b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b RSoft Design Inc   (United States)

Author keywords

II VI gate FET; Nonvolatile memory; Quantum dot gate FET; Three state FET; ZnMgS gate insulator FET

Indexed keywords

II-VI GATE FET; NONVOLATILE MEMORY; QUANTUM DOT GATE FET; THREE-STATE FET; ZNMGS GATE INSULATOR FET;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GERMANIUM; MESFET DEVICES; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; ZINC SULFIDE;

GATE DIELECTRICS;

EID: 68749096980     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0755-x     Document Type: Conference Paper

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