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Volumn 40, Issue 6, 2008, Pages 1811-1814

Towards an universal memory based on self-organized quantum dots

Author keywords

DRAM; Flash; Memory; Quantum dots

Indexed keywords

CUTOFF FREQUENCY; DYNAMIC RANDOM ACCESS STORAGE; ENERGY STORAGE; FLASH MEMORY; THERMOELECTRICITY;

EID: 41349083531     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.09.108     Document Type: Article
Times cited : (33)

References (16)
  • 2
    • 41349091697 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, ITRS 2005 ed., January 2006.
    • International Technology Roadmap for Semiconductors, ITRS 2005 ed., January 2006.
  • 4
    • 41349119435 scopus 로고    scopus 로고
    • M. Geller, A. Marent, D. Bimberg, Speicherzelle und Verfahren zum Speichern von Daten, Deutsche Patentanmeldung Nr. 10 2006 059 110.0, 27. 10. 2006.
    • M. Geller, A. Marent, D. Bimberg, Speicherzelle und Verfahren zum Speichern von Daten, Deutsche Patentanmeldung Nr. 10 2006 059 110.0, 27. 10. 2006.
  • 5
    • 0003074482 scopus 로고    scopus 로고
    • Evolution of nonvolatile semiconductor memory: from floating-gate concept to single-electron memory cell
    • Luryi S., Xu J., and Zaslavsky A. (Eds), Wiley, New York
    • Sze S.M. Evolution of nonvolatile semiconductor memory: from floating-gate concept to single-electron memory cell. In: Luryi S., Xu J., and Zaslavsky A. (Eds). Future Trends in Microelectronics (1999), Wiley, New York 291
    • (1999) Future Trends in Microelectronics , pp. 291
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.