X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Yarlagadda, B ^a,b   Rodriguez, A ^a,c   Li, P ^a,d   Velampati, R ^a   Ocampo, J F ^a   Suarez, E N ^a   Rago, P B ^a   Shah, D ^a   Ayers, J E ^a   Jain, F C ^a  

^a University of Connecticut   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c INTEL CORPORATION   (United States)

^d EAST CAROLINA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AZIMUTHAL VARIATION; HETEROEPITAXIAL SEMICONDUCTORS; ZINC BLENDE SEMICONDUCTOR LAYER;

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MATHEMATICAL MODELS; X RAY ANALYSIS; ZINC COMPOUNDS;

SEMICONDUCTING FILMS;

EID: 44349123385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936078     Document Type: Article

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