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Volumn 206, Issue 8, 2009, Pages 1904-1911

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; DEFECT LEVELS; ELECTRON-HOLE RECOMBINATION; ELEVATED TEMPERATURE; EXTENDED DEFECT; IN-SITU ANALYSIS; LIGHT ILLUMINATION; MIXED DISLOCATION; MONOCHROMATIC LIGHT; NON-RADIATIVE RECOMBINATIONS; OPTOELECTRONIC PROPERTIES; PHOTON ENERGY; RADIATIVE RECOMBINATION; SCREW DISLOCATIONS; TEM OBSERVATIONS; ZNO;

EID: 68649097075     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881466     Document Type: Conference Paper
Times cited : (15)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.