High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Yonenaga, I ^a   Koizumi, H ^a   Ohno, Y ^a   Taishi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

DISLOCATION MOBILITY; DISLOCATION MOTION; WIDE BAND-GAP ZNO;

ZINC OXIDE;

EID: 43949143554     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908193     Document Type: Article

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