Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10169-10174

  Hilpert, U ^a   Schreiber, J ^a   Worschech, L ^b   Horing L ^a   Ramsteiner, M ^c   Ossau, W ^b   Landwehr, G ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS;

EXCITONIC STATES;

SEMICONDUCTING FILMS;

EID: 0034513403     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/316     Document Type: Article

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