Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films

Journal of Crystal Growth

Volumn 311, Issue 17, 2009, Pages 4270-4274

  Ran, Fan Yong ^a   Tanemura, Masaki ^a   Hayashi, Yasuhiko ^a   Hihara, Takehiko ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Doping; A3. Helicon magnetron sputtering; B2. Magnetic semiconductor; B2. Semiconducting II VI materials

Indexed keywords

A1. DOPING; A3. HELICON MAGNETRON SPUTTERING; B2. MAGNETIC SEMICONDUCTOR; B2. SEMICONDUCTING II-VI MATERIALS; CU IONS; CU-DOPED ZNO; DIVALENT STATE; ROOM TEMPERATURE; ROOM-TEMPERATURE FERROMAGNETISM; SUBSTRATE TEMPERATURE; VACUUM-ANNEALING; WURTZITE STRUCTURE; ZINC INTERSTITIALS; ZNO FILMS;

COPPER; DOPING (ADDITIVES); FERROMAGNETISM; HELICONS; MAGNETIC SEMICONDUCTORS; MAGNETRONS; METALLIC FILMS; OXYGEN; OXYGEN VACANCIES; SATURATION MAGNETIZATION; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; ZINC; ZINC OXIDE; ZINC SULFIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 68549083537     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.008     Document Type: Article

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