Determination of lattice parameters of SiGe/Si(110) heterostructures

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 132-135

  Arimoto, Keisuke ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Sawano, Kentarou ^b   Shiraki, Yasuhiro ^b   Koh, Shinji ^c   Usami, Noritaka ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Reciprocal space map; SiGe; XRD

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; HETEROJUNCTIONS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; STRAIN; SUBSTRATES; X RAY DIFFRACTION;

RECIPROCAL SPACE MAP; SIGE; XRD;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33646089894     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.412     Document Type: Article

References (3)

1. Mizuno T., et al. Symp. VLSI (2003) 97
2. Mizuno T., et al. IEEE Electron Device Lett. vol. 24 (2003) 266
3. Sugiyama N., et al. Alignment of Dislocations during the Ge Condensation of SiGe-on-Insulator with a (110) Surface (3rd International Workshop on New Group IV Semiconductors) (2004)