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Volumn 517, Issue 1, 2008, Pages 235-238
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
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Author keywords
110; Molecular beam epitaxy; SiGe
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Indexed keywords
CRYSTAL GROWTH;
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR QUANTUM WIRES;
SILICON;
SILICON ALLOYS;
SUBSTRATES;
110;
CRYSTALLINE MORPHOLOGIES;
DIFFERENT SUBSTRATES;
GRADED BUFFERS;
HETEROSTRUCTURES;
MOLECULAR-BEAM EPITAXIES;
SI(110);
SIGE;
SIGE FILMS;
SUBSTRATE TEMPERATURES;
TEMPERATURE DEPENDENCES;
GAS SOURCE MOLECULAR BEAM EPITAXY;
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EID: 54849412057
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.08.130 Document Type: Article |
Times cited : (11)
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References (9)
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