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Volumn 47, Issue 2, 2009, Pages

Deposition of functional hydrogenated amorphous carbon-nitride film (a-CN:H) using C2H2/N2 townsend dielectric barrier discharge

(5) Sarra Bournet, C a,b,c,d Gherardi, N a,b Turgeon, S c Laroche, G c,d Massines, F b

a Laboratoire Plasma et Conversion d'Energie (France)

b CNRS (France)

c Université Laval (Canada)

d UNIVERSITÉ LAVAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; DIELECTRIC BARRIER DISCHARGES; GROWTH MECHANISMS; HIGH CONCENTRATION; HYDROGENATED AMORPHOUS CARBON; HYDROGENATED AMORPHOUS CARBON NITRIDE; POWDER FORMATION; PRECURSOR MOLECULES; RESIDENCE TIME; SURFACE CHARACTERIZATION; TOWNSEND DISCHARGES;

AMORPHOUS CARBON; AMORPHOUS FILMS; ATMOSPHERIC COMPOSITION; ATMOSPHERIC PRESSURE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; PLASMA DISPLAY DEVICES; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDE;

EID: 68349101111 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap/2009079 Document Type: Conference Paper

Times cited : (4)

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