Characterization of amorphous and nanostructured Si films by differential scanning calorimetry

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6239-6242

  Roura, P ^a   Farjas, J ^a   Roca i Cabarrocas, P ^b  

^a UNIVERSITY OF GIRONA   (Spain)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Crystallization; Dehydrogenation; DSC; Hydrogenated silicon films

Indexed keywords

AMORPHOUS PHASE; CRYSTALLINE PHASIS; CRYSTALLIZATION TEMPERATURE; DSC; EPITAXY MECHANISM; HYDROGEN DIFFUSION; HYDROGENATED SILICON FILMS; LOW COUPLING; LOW TEMPERATURES; NANO-STRUCTURED; SI FILMS; SI-H BONDS; SILICON THIN FILM; SOLID STATE TRANSFORMATIONS; STRAINED BONDS; STRUCTURAL DEFECT;

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION KINETICS; DEHYDROGENATION; DIFFERENTIAL SCANNING CALORIMETRY; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; METALLIC FILMS; SCANNING; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

AMORPHOUS FILMS;

EID: 68349087002     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.081     Document Type: Article

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