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Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

(3) Roura, P a Farjas, J a Roca I Cabarrocas, P b

a UNIVERSITY OF GIRONA (Spain)

b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSION (WAVES); SILICON; STRAIN ENERGY;

CRITICAL ANALYSES; CRYSTALLIZATION ENERGIES; DEFECT ANNIHILATIONS; DIRECT DETERMINATIONS; OPTICAL RAMAN; PREDICTED VALUES;

AMORPHOUS SILICON;

EID: 54049084565 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2990767 Document Type: Article

Times cited : (32)

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