Anomalous crystallization of hydrogenated amorphous silicon during fast heating ramps

Journal of Materials Research

Volumn 20, Issue 2, 2005, Pages 277-281

  Farjas, J ^a   Serra Miralles, J ^a   Roura, P ^a   Bertran, E ^b   Roca Cabarrocas, P ^c  

^a UNIVERSITY OF GIRONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; ENTHALPY; GRAIN SIZE AND SHAPE; HEAT FLUX; HEATING; HYDROGENATION; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

HEATING RAMPS; HYDROGENATED AMORPHOUS SILICON; THERMAL CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 28044435615     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0037     Document Type: Article

References (17)

1. J.F. Pierson, K.S. Kim, J. Jolly, and D. Mencaraglia: Crystallization of n-doped amorphous silicon PECVD films: Comparison between SPC and RTA methods. J. Non-Cryst. Solids 270, 91 (2000).
2. Technology and Applications of Amorphous Silicon, edited by R.A. Street (Springer, Berlin, Germany, 2000).
3. M.K. Hatalis and D.W. Greve: Large grain polycrystalline silicon by low temperature annealing of low-pressure chemical vapor deposited amorphous silicon films. J. Appl. Phys. 63, 2260 (1998).
4. C. Spinella, S. Lombardo, and F. Priolo: Crystal grain nucleation in amorphous silicon. J. Appl. Phys. 84, 5383 (1998).
5. 2: Temperature dependence of the crystallization parameters. J. Appl. Phys. 62, 1675 (1987).
6. Y. Masaki, P.G. LeComber, and A.G. Fitzgerald: Solid phase crystallization of thin films of Si prepared by plansma enhanced chemical vapour deposition. J. Appl. Phys. 74, 129 (1993).
7. E.P. Donovan, F. Spaepen, D. Turnbull, J.M. Poate, and D.C. Jacobson: Heat of crystallization and melting point of amorphous silicon. Appl. Phys. Lett. 42, 698 (1983).
8. J. Farjas, C. Rath, P. Roura, and P. Roca i Cabarrocas: Crystallization kinetics of hydrogenated amorphous silicon thick films by plasma enhanced chemical vapour deposition. Appl. Surf. Sci. 238, 165 (2004).
9. P.M. Voyles and J.R. Abelson: Medium-range order in amorphous silicon measured by fluctuation electron microscopy. Sol. Energy Mater. Sol. Cells 78, 85 (2003).
10. E. Bertran, S.N. Sharma, G. Viera, J. Costa, P. St'ahel, and P. Roca i Cabarrocas: Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by RF glow discharge. J. Mater. Res. 13, 2476 (1998).
11. E. Bertran, J. Costa, G. Sardin, J. Campmany, J.L. Andújar, and A. Canillas: Effects of plasma processing on the microstructural properties of Si powders. Plasma Sources Sci. Technol. 3, 348 (1994).
12. D. Das, J. Farjas, P. Roura, G. Viera, and E. Bertran: Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation. Appl. Phys. Lett. 79, 3705 (2001).
13. z nanoparticles. Diamond Relat. Mater. 10, 1295 (2001).
14. D.E. Henderson: Thermal-analysis of non-isothermal crystallization kinetics in glass forming liquids. J. Non-Cryst. Solids 30, 301 (1979).
15. H. Kumomi and T. Yonehara: Transient nucleation and manipulation of nucleation sites in solid-state crystallization of a-Si films. J. Appl. Phys. 75, 2884 (1994).
16. W. Paul, S.J. Jones, and W.A. Turner: Studies on the structure of a-Ge:H using differential scanning calorimetry, gas evolution on heating and TEM. Philos. Mag. B 63, 247 (1991).
17. F. Secco d'Aragona: Dislocation etch for (100) planes in silicon. J. Electrochem. Soc. 119, 948 (1972).