A theoretical model for threading dislocation reduction during selective area growth

Materials Science and Engineering: A

Volumn 234-236, Issue , 1997, Pages 794-797

  Beltz, G E ^a   Chang, M ^a   Eardley, M A ^b   Pompe, W ^c   Romanov, A E ^d   Speck, J S ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MAX PLANCK INSTITUTE   (Germany)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

Dislocation; Heteroepitaxy; Mesa

Indexed keywords

COMPUTER SIMULATION; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; REACTION KINETICS; SUBSTRATES; THIN FILMS;

SELECTIVE AREA GROWTH; THREADING DISLOCATIONS (TDS);

SEMICONDUCTING FILMS;

EID: 0042043053     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5093(97)00304-3     Document Type: Article

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