Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 8, Issue 3, 2009, Pages

  Ci, Pengliang ^a   Tian, Fei ^a   Shi, Jing ^a   Xu, Shaohui ^a   Xin, Peisheng ^a   Wang, Lianwei ^a   Chu, Paul K ^b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; IMAGE STORAGE TUBES; LIGHTING; MICROCHANNELS; PHOTORESISTS; PRESSURE DROP; SURFACE TOPOGRAPHY; TUNGSTEN;

BACKSIDE ILLUMINATION; CIRCULATION SYSTEMS; CONSTANT CURRENT DENSITY; ETCHING CONDITION; ETCHING TEMPERATURE; FEED-BACK LOOP; HIGH ASPECT RATIO; LARGE EFFECTIVE; LARGE SIZES; P-TYPE SILICON; PHOTO-ELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICAL; SILICON MICROCHANNELS; SILICON SUBSTRATES; TUNGSTEN HALOGEN LAMP;

ASPECT RATIO;

EID: 67849110034     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3158616     Document Type: Article

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