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Volumn , Issue , 2008, Pages 219-221

Phase change memory

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; DATA STORAGE EQUIPMENT; PULSE CODE MODULATION;

EID: 50949119152     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2008.4546972     Document Type: Conference Paper
Times cited : (17)

References (11)
  • 1
    • 50949086361 scopus 로고    scopus 로고
    • U.S. Patent No. 3271591, issue date Sept. 1966
    • S. R. Ovshinsky, U.S. Patent No. 3271591, issue date Sept. 1966.
    • Ovshinsky, S.R.1
  • 2
    • 50949105405 scopus 로고    scopus 로고
    • T. Nirschl et al., Write strategies for 2 and 4-bit multi-level phase-change memory, IEDM Tech. Dig., p. 17.5, 2007.
    • T. Nirschl et al., "Write strategies for 2 and 4-bit multi-level phase-change memory," IEDM Tech. Dig., p. 17.5, 2007.
  • 3
    • 46149125725 scopus 로고    scopus 로고
    • Y. C. Chen et al., Ultra-thin Phase-change Bridge Memory Device Using GeSb, IEDM Tech. Dig., p. S30P3, 2006.
    • Y. C. Chen et al., "Ultra-thin Phase-change Bridge Memory Device Using GeSb," IEDM Tech. Dig., p. S30P3, 2006.
  • 4
    • 36248991742 scopus 로고    scopus 로고
    • Reused with permission from Simone Raoux, Journal of Applied Physics, 102, 094305 (2007). Copyright 2007, American Institute of Physics.
    • Reused with permission from Simone Raoux, Journal of Applied Physics, 102, 094305 (2007). Copyright 2007, American Institute of Physics.
  • 5
    • 46049090421 scopus 로고    scopus 로고
    • J.H. Oh et al., Full integration of highly manufacturable 512mb PRAM based on 90nm technology, IEDM Tech. Dig., p 2.6, 2006.
    • J.H. Oh et al., "Full integration of highly manufacturable 512mb PRAM based on 90nm technology," IEDM Tech. Dig., p 2.6, 2006.
  • 6
    • 0035717521 scopus 로고    scopus 로고
    • OUM - A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications
    • S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications." IEDM. Tech. Dig., p. 3651-3654 (2001).
    • (2001) IEDM. Tech. Dig , pp. 3651-3654
    • Lai, S.1    Lowrey, T.2
  • 8
    • 4544229593 scopus 로고    scopus 로고
    • Novel μ?trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
    • F. Pellizzer et al., "Novel μ?trench phase-change memory cell for embedded and stand-alone non-volatile memory applications," Symposium on VLSI Technology, p. 18-19, 2004.
    • (2004) Symposium on VLSI Technology , pp. 18-19
    • Pellizzer, F.1
  • 9
    • 30344435158 scopus 로고    scopus 로고
    • Highly reliable 50nm contact cell technology for 256mb PRAM
    • S.J. Ahn et al., "Highly reliable 50nm contact cell technology for 256mb PRAM," Symposium on VLSI Technology, p. 98-99, 2005.
    • (2005) Symposium on VLSI Technology , pp. 98-99
    • Ahn, S.J.1
  • 10
    • 47249119179 scopus 로고    scopus 로고
    • Novel Lithography-independent Pore Phase Change Memory
    • M. Breitwisch et al., "Novel Lithography-independent Pore Phase Change Memory," Symposium on VLSI Technology, p. 6B-3, 2007.
    • (2007) Symposium on VLSI Technology
    • Breitwisch, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.