Beam properties of 980-nm tapered lasers with separate contacts: Experiments and simulations

IEEE Journal of Quantum Electronics

Volumn 45, Issue 1, 2009, Pages 42-50

  Odriozola, H ^a   Tijero, J M G ^a   Borruel, L ^a   Esquivias, I ^a   Wenzel, H ^b   Dittmar, F ^b,c   Paschke, K ^b   Sumpf, B ^b   Erbert, G ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c DILAS Diodenlaser GmbH   (Germany)

Author keywords

High brightness laser; Laser diodes; Simulation model; Tapered laser

Indexed keywords

BEAM PROPERTIES; CURRENT DRIVES; DEVICE GEOMETRIES; FIELD INTENSITY; HIGH BRIGHTNESS LASERS; LASER DIODES; NEW MODEL; RIDGE WAVEGUIDES; SIMULATION MODEL; TAPERED LASERS;

WAVEGUIDES;

EID: 67650859371     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2005358     Document Type: Article

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