High-power 1.5-μm tapered-gain-region lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3284, Issue , 1998, Pages 54-62

  Donnelly, J P ^a   Walpole, J N ^a   Groves, S H ^a   Bailey, R J ^a   Missaggia, L J ^a   Napoleone, A ^a   Reeder, R E ^a   Cook, C C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

1.5 m Tapered Lasers; High Power 1.5 m Lasers; Tapered Lasers

Indexed keywords

CURRENT DENSITY; DIFFRACTION; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

TAPERED LASERS;

SEMICONDUCTOR LASERS;

EID: 0032224560     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304466     Document Type: Conference Paper

References (14)

1. High-power, strained-layer InGaAs/AlGaAs tapered traveling wave amplifier
2. High-power, strained-layer amplifiers and lasers with tapered gain regions
3. 1.1 W diffraction-limited operation of monolithically integrated flared amplifier master oscillator power amplifier
4. High-power high-gain monolithically integrated preamplifier/power amplifier
5. GaInAsSb-AlGaAsSb tapered lasers emitting at 2 μm
6. A GaInAsP/InP tapered-waveguide semiconductor laser amplifier integrated with a 1.5 μm distributed feedback laser
7. Strained-layer InGaAsP diode lasers with tapered gain region for operation at 1.3 μm
8. 620 mW near-diffraction-limited, 1.8 μm tapered laser
9. High-power 1.5-μm InGaAsP/InP lasers with a tapered-gain-region
10. High power diffraction limited Output from a tapered laser operating at 1.55 μm
11. Diffraction-limited 1.3 μm wavelength tapered-gain-region lasers with over 1-W output power
12. High-power 1.3 μm InGaAsP/InP amplifiers with tapered gain regions
13. Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers