Design strategies to increase the brightness of gain guided tapered lasers

Optical and Quantum Electronics

Volumn 40, Issue 2-4, 2008, Pages 175-189

  Borruel, Luis ^a   Odriozola, Helena ^a   Tijero, José M G ^a   Esquivias, Ignacio ^a   Sujecki, Slawomir ^b   Larkins, Eric C ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Brightness; High power laser; Modelling; Semiconductor laser; Simulation; Tapered laser

Indexed keywords

BEAM BRIGHTNESS; BRIGHTNESS; CARRIER INDUCED; DESIGN GUIDELINES; DESIGN PARAMETERS; DESIGN STRATEGIES; DEVICE PERFORMANCES; HIGH POWER LASER; MAXIMUM OUTPUT POWER; MODELLING; NUMERICAL SIMULATIONS; OPERATING PRINCIPLES; RIDGE WAVE-GUIDE; SEMICONDUCTOR LASER; SIMULATION; SPATIAL HOLE BURNING; TAPERED LASER; TAPERED LASERS;

COMPUTER SIMULATION; FIBER LASERS; LASERS; REFRACTIVE INDEX; WAVEGUIDES;

OPTICAL PROPERTIES;

EID: 49449110654     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-008-9187-8     Document Type: Article

References (10)

1. Borruel L., Sujecki S., Moreno P., Wykes J., Krakowski M., Sumpf B., Sewell P., Auzanneau S.C., Wenzel H., Rodríguez D., Benson T.M., Larkins E.C. and Esquivias I. (2004). Quasi-3-D simulation of high-brightness tapered lasers. IEEE J. Quantum Electron 40: 463-472
2. Borruel L., Esquivias I., Moreno P., Krakowski M., Auzanneau S.C., Calligaro M., Parillaud O., Lecomte M., Sujecki S., Wykes J. and Larkins E.C. (2005). Clarinet laser: Semiconductor laser design for high-brightness applications. Appl. Phys. Lett. 87: 101104-101106
3. 2 = 1.9 at P = 4.4 W. IEEE Photon. Technol. Lett. 18: 601-603
4. Kelemen M.T., Weber J., Bihlmann G., Moritz R., Mikulla M. and Weimann G. (2005). Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power. Electron. Lett. 41(18): 1011-1013
5. Kintzer E.S., Walpole J.N., Chinn S.R., Wang C.A. and Missaggia L.J. (1993). High-power, strained-layer amplifiers and lasers with tapered gain regions. IEEE Photon. Technol. Lett. 5: 605-607
6. Krakowski M., Auzanneau S.C., Calligaro M., Parillaud O., Collot P., Lecomte M., Boulant B. and Fillardet T. (2002). High power and high brightness laser diode structures at 980 nm using Al-free materials. Proc. SPIE 4651: 80-91
7. Odriozola, H., Borruel, L., Tijero, J.M.G., Esquivias, I., Sujecki, S., Larkins, E.C.: Losses of the unstable cavity in tapered laser diodes: estimation from numerical simulations. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '05), 19-22 Sept. 2005, pp. 31-32 (2005)
8. Sujecki S., Borruel L., Wykes J., Moreno P., Sumpf B., Sewell P., Wenzel H., Benson T.M., Erbert G., Esquivias I. and Larkins E.C. (2003). Nonlinear properties of tapered laser cavities. IEEE J. Select. Topics Quantum Electron 9: 823-834
9. Walpole J.N. (1996). Semiconductor amplifiers and lasers with tapered gain regions. Opt. Quantum Electron 28: 623-645
10. Wenzel H., Sumpf B. and Erbert G. (2003). High-brightness diode lasers. C.R. Physique 4: 649-661