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Volumn 40, Issue 2-4, 2008, Pages 175-189

Design strategies to increase the brightness of gain guided tapered lasers

Author keywords

Brightness; High power laser; Modelling; Semiconductor laser; Simulation; Tapered laser

Indexed keywords

BEAM BRIGHTNESS; BRIGHTNESS; CARRIER INDUCED; DESIGN GUIDELINES; DESIGN PARAMETERS; DESIGN STRATEGIES; DEVICE PERFORMANCES; HIGH POWER LASER; MAXIMUM OUTPUT POWER; MODELLING; NUMERICAL SIMULATIONS; OPERATING PRINCIPLES; RIDGE WAVE-GUIDE; SEMICONDUCTOR LASER; SIMULATION; SPATIAL HOLE BURNING; TAPERED LASER; TAPERED LASERS;

EID: 49449110654     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-008-9187-8     Document Type: Article
Times cited : (28)

References (10)
  • 4
    • 25444511583 scopus 로고    scopus 로고
    • Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power
    • 18
    • Kelemen M.T., Weber J., Bihlmann G., Moritz R., Mikulla M. and Weimann G. (2005). Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power. Electron. Lett. 41(18): 1011-1013
    • (2005) Electron. Lett. , vol.41 , pp. 1011-1013
    • Kelemen, M.T.1    Weber, J.2    Bihlmann, G.3    Moritz, R.4    Mikulla, M.5    Weimann, G.6
  • 9
    • 0030172191 scopus 로고    scopus 로고
    • Semiconductor amplifiers and lasers with tapered gain regions
    • Walpole J.N. (1996). Semiconductor amplifiers and lasers with tapered gain regions. Opt. Quantum Electron 28: 623-645
    • (1996) Opt. Quantum Electron , vol.28 , pp. 623-645
    • Walpole, J.N.1
  • 10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.