Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1665-1667

  Miyajima, Takao ^a   Uemura, Shigeaki ^a   Kudo, Yoshihiro ^a   Kitajima, Yoshinori ^b   Yamamoto, Akio ^c   Muto, Daisuke ^d   Nanishi, Yasushi ^d  

^a SONY CORPORATION   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^c UNIVERSITY OF FUKUI   (Japan)

^d RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; CARRIER COMPENSATION; ELECTRON ACCUMULATION; EXPERIMENTAL DATA; MG-DOPED; MOCVD; P-TYPE CONDUCTIVITY; SIMULATED DATA; X RAY ABSORPTION FINE STRUCTURES; XAFS;

ABSORPTION; CHEMICAL VAPOR DEPOSITION; NITRIDES; SECONDARY BATTERIES; X RAY ABSORPTION;

ATOMS;

EID: 67650746340     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778580     Document Type: Conference Paper

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