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Volumn 18, Issue 6, 2009, Pages 2610-2614
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The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites
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Author keywords
Annealing; I V characteristics; Photoluminescence
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Indexed keywords
ANNEALING TEMPERATURES;
ANNEALING TREATMENTS;
CRYSTALLINITY;
DIFFRACTION PEAKS;
FORWARD CURRENTS;
GREEN EMISSIONS;
I-V CHARACTERISTICS;
LUMINESCENCE INTENSITY;
OPTICAL AND ELECTRICAL PROPERTIES;
PL SPECTRA;
PREFERRED ORIENTATIONS;
RECTIFYING BEHAVIORS;
SCANNING ELECTRON MICROSCOPES;
SELF-ACTIVATED LUMINESCENCE;
ZNS FILMS;
ANNEALING;
DIFFRACTION;
DISTILLATION;
ELECTRIC PROPERTIES;
EMISSION SPECTROSCOPY;
FILM PREPARATION;
GRAIN SIZE AND SHAPE;
LIGHT;
LIGHT EMISSION;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
POROUS SILICON;
PULSED LASER DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
SUBSTRATES;
THERMAL EFFECTS;
X RAY DIFFRACTION;
ZINC SULFIDE;
GRAIN GROWTH;
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EID: 67650739746
PISSN: 16741056
EISSN: None
Source Type: Journal
DOI: 10.1088/1674-1056/18/6/081 Document Type: Article |
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Times cited : (7)
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References (18)
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