N-type ZnS used as electron transport material in organic light-emitting diodes

Chinese Physics

Volumn 15, Issue 6, 2006, Pages 1370-1373

  Du, Peng ^a   Zhang, Xi Qing ^a   Sun, Xue Bai ^a   Yao, Zhi Gang ^a   Wang, Yong Sheng ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

Efficiency; Electron transport layer; Luminance; n type ZnS; OLEDs

Indexed keywords

CHARGE CARRIERS; EFFICIENCY; ELECTRON TRANSITIONS; INDIUM COMPOUNDS; TRANSPORT PROPERTIES; ZINC SULFIDE;

ELECTRON TRANSPORT LAYERS; LUMINANCES; N-TYPE ZNS; OLEDS;

LIGHT EMITTING DIODES;

EID: 33746584065     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/6/040     Document Type: Article

References (8)

1. Tang C W and Vanslyke S A 1987 Appl. Phys. Lett. 51 913
2. Borroughes J H, Bradley D D C, Brown A R, Marks R N, Friend R H, Burn P L and Holmes A H 1990 Nature 347 539
3. Dai G Z, Li H J, Pan Y Z, Dai X Y and Ma Q Q 2005 Chin. Phys. 14 2590
4. Antoniadis H, Miller J N and Roitman D M 1996 Inorganic and Organic Electroluminescence (Berlin: Wissenschaft and Technik-Verlag)
5. Sheats J R, Antoniadis H, Hueschen M, Leonard W, Miller J, Moon R, Roitman D and Stocking A 1996 Science 273 884
6. Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradley D D C, Dos Santos D A, Bredas J L, Logdlund M and Salaneck W R 1999 Nature 397 121
7. Peng Y Q, Zhang F J and Song C A 2003 Chin. Phys. 12 102
8. Hung L S, Tang C W and Mason M G 1997 Appl. Phys. Lett. 70 152