Optoelectronic characterisation of porous silicon/CdS and ZnS systems

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 175-179

  Gokarna, A ^a   Bhoraskar, S V ^a   Pavaskar, N R ^b   Sathaye, S D ^b  

^a UNIVERSITY OF PUNE   (India)

^b NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

HALL MEASUREMENT; LIQUID-LIQUID INTERFACE REACTION;

POROUS SILICON;

EID: 0034430054     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<175::AID-PSSA175>3.0.CO;2-O     Document Type: Article

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