Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Sturiale, A ^a   Li, Hongbo T ^b   Rath, J K ^b   Schropp, R E I ^b   Rubinelli, F A ^a  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; APPLIED VOLTAGES; BOTTOM CELLS; DARK CURRENT-VOLTAGE; DIAGNOSIS TOOLS; ELECTRON HOLE PAIRS; ELECTRON SPACE CHARGE; EXPONENTIAL DEPENDENCE; FORWARD VOLTAGE; FREE CARRIERS; GAP STATE; INTRINSIC LAYER; NUMERICAL MODELING; TANDEM CELLS; TANDEM SOLAR CELLS; TANDEM STRUCTURE; TRANSPORT MECHANISM;

CADMIUM SULFIDE SOLAR CELLS; CELL MEMBRANES; DARK CURRENTS; ELECTRIC POTENTIAL; EXCITONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67650708810     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151691     Document Type: Article

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