Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3023-3025

  Deng, J ^a   Pearce, J M ^a   Koval, R J ^a   Vlahos, V ^a   Collins, R W ^a   Wronskia, C R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; SOLAR CELLS;

DEFECT POOL MODEL;

SILICON;

EID: 0038189733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1571985     Document Type: Article

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