A comparison of the hydrogenated amorphous Si schottky barrier and the hydrogenated amorphous Si p—i—n dark forward-bias current density—Voltage characteristics

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 74, Issue 4, 1996, Pages 407-426

  Rubinelli, F A ^a,b   Liu, H ^a,c   Wronski, C R ^a,c  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b UTRECHT UNIVERSITY   (Netherlands)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012146927     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418639608240343     Document Type: Article

References (28)

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