Modeling a-Si:H p-i-n solar cells with the defect pool model

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 686-689

  Klimovsky, E ^a   Rath, J K ^b   Schropp, R E I ^b   Rubinelli, F A ^a  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ENERGY GAP; GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ABSORPTION COEFFICIENT; DANGLING BONDS; DEFECT POOL MODEL (DPM); MULTICHANNEL CHAMBERS;

SOLAR CELLS;

EID: 2942534312     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.064     Document Type: Conference Paper

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