High performance Schottky barrier MOSFETs on UTB SOI

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 65-68

  Urban, C ^a   Sandow, C ^a   Zhao, Q T ^a   Mantl, S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; B SEGREGATION; CHANNEL LENGTH; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DOPANT SEGREGATION; DOPANT-FREE; FULLY DEPLETED; IMPLANTATION DOSE; LOW TEMPERATURES; MOSFETS; NICKEL SILICIDE; ON-CURRENT; ON-CURRENTS; P-TYPE; SCHOTTKY BARRIER MOSFETS; SCHOTTKY BARRIERS; SHORT CHANNELS; SILICIDATION; SWITCHING PERFORMANCE;

SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SILICIDES;

MOSFET DEVICES;

EID: 67650670729     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897540     Document Type: Conference Paper

References (11)

1. J. Kedzierski et al., IEDM Tech. Dig., 57 (2000)
2. M. Zhang et al., Electron. Lett. 41, No. 19, 1085 (2005)
3. Z. Zhang et al., IEEE Electron Device Lett., Vol. 29, No. 5, May 2008
4. G. Larrieu et al., IEDM Tech. Dig., pp. 147-150 (2007)
5. T. Yamauchi et al., IEDM Tech. Dig., (2006)
6. M. Zhang et al., IEEE Trans. Electron Devices, Vol. 55, No. 3, pp. 858-865, March 2008
7. C. Urban et al., Conference Proceeding EUROSOI 2009, pp. 127-128 (2009)
8. C. Urban et al., Ultimate Integration of Silicon, ULIS 2008. 9th International Conference on, pp. 151-154 (2008)
9. J. M. Larson et al., IEEE Trans. Electron Devices, Vol. 53, No. 5, pp. 1048-1058, May 2006
10. T. Kinoshita et al., IEDM Tech. Dig., (2006)
11. C. H. Ko et al., 2006 Symp. VLSI Tech., pp. 80-81 (2006)