Model calculation of SiC oxide growth rate based on the silicon and carbon emission model

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 489-492

  Hijikata, Yasuto ^a   Yaguchi, Hiroyuki ^a   Yoshida, Sadafumi ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

Deal Grove model; Growth rate enhancement; Model calculation; Oxidation; Si emission model

Indexed keywords

OXIDATION; SILICON CARBIDE;

CALCULATED VALUES; DEAL-GROVE MODEL; KINETIC MODELING; MODEL CALCULATIONS; OXIDATION MECHANISMS; OXIDATION PROCESS; RATE ENHANCEMENT; SI EMISSION;

GROWTH RATE;

EID: 67650452007     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.489     Document Type: Conference Paper

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