Ultralow-energy boron-ion implantation of silicon

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 23-25

  Yamamoto, Kazuhiro ^a   Itoh, Hiroshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Boron; Doping; Ion implantation; Low energy ion; Shallow doping; Silicon; SIMS

Indexed keywords

BORON; ELECTRIC PROPERTIES; ION BEAMS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE;

ACTIVATION RATIOS; INTERSTITIAL SITES; SHALLOW DOPING; SILICON SURFACE;

SILICON;

EID: 38549092525     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.23     Document Type: Article

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