Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 16, 2009, Pages

  Yang, L ^a,b   Pourtois, G ^a   Caymax, M ^a   Ceulemans, A ^b   Heyns, M ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650314332     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.165312     Document Type: Article

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