Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Zhou, Xin ^a   Uchida, Ken ^a   Mizuta, Hiroshi ^a,b   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DE-TRAPPING; ENERGY MEASUREMENTS; HIGH VOLTAGE; MATERIAL PARAMETER; POOLE-FRENKEL; SI NANOCRYSTAL; TEMPERATURE DEPENDENCE; THERMAL DE-TRAPPING; TRANSPORT MECHANISM;

DC GENERATORS; ELECTRIC POTENTIAL; NANOCRYSTALS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

ACTIVATION ENERGY;

EID: 67650242335     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151688     Document Type: Conference Paper

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