The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric

Synthetic Metals

Volumn 159, Issue 14, 2009, Pages 1467-1470

  Yu, Aifang ^a   Qi, Qiong ^a   Jiang, Peng ^a   Jiang, Chao ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

Field effect mobility; Gate leakage current; HfO2; Hysteresis; Pentacene based thin film transistors; Polystyrene buffer layer

Indexed keywords

DIELECTRIC SURFACE; ELECTRICAL PERFORMANCE; ELECTRICAL STABILITY; FIELD EFFECT MOBILITY; FIELD-EFFECT MOBILITIES; GATE LEAKAGE CURRENT; HFO2; HIGH MOBILITY; HIGH-K OXIDES; LOW VOLTAGES; LOW-VOLTAGE; NON-POLAR; ORGANIC THIN FILM TRANSISTORS; PENTACENE; PENTACENE-BASED THIN-FILM TRANSISTORS; SI SUBSTRATES; SPIN-COATING METHOD;

BUFFER LAYERS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; MOS CAPACITORS; POLYSTYRENES; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 67650064899     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.04.001     Document Type: Article

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