Temperature-dependent gate effect of sintered HgTe nanoparticles

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 7213-7216

  Kim, Hyunsuk ^a   Cho, Kyoungah ^a   Kim, Dong Won ^a   Moon, Byung Moo ^a   Sung, Man Young ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Gate effect; HgTe; Mobility; Nanoparticle

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC POTENTIAL; MERCURY COMPOUNDS; SINTERING; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

COLLOIDAL METHOD; FIELD-EFFECT MOBILITIES; GATE EFFECTS; HGTE;

NANOSTRUCTURED MATERIALS;

EID: 33748993389     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7213     Document Type: Article

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