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Volumn 44, Issue 13, 2009, Pages 3556-3560
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Thickness effects of Bi3.5Nd0.5Ti3O 12 buffer layers on structure and electrical properties of BiFeO 3 films
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Author keywords
[No Author keywords available]
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Indexed keywords
BFO FILMS;
BUFFER LAYER THICKNESS;
DOUBLE-LAYERED FILMS;
ELECTRICAL PROPERTY;
INDIUM TIN OXIDE;
METAL ORGANIC DECOMPOSITION;
P-E HYSTERESIS LOOPS;
REMANENT POLARIZATION;
SI SUBSTRATES;
THICKNESS EFFECT;
BUFFER LAYERS;
DECOMPOSITION;
ELECTRIC PROPERTIES;
EPITAXIAL LAYERS;
HYSTERESIS;
HYSTERESIS LOOPS;
MAGNETIC MATERIALS;
NEODYMIUM;
ORGANOMETALLICS;
PHOTODEGRADATION;
SEMICONDUCTING BISMUTH COMPOUNDS;
SUBSTRATES;
TIN;
X RAY DIFFRACTION;
OPTICAL WAVEGUIDES;
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EID: 67649958071
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-009-3479-7 Document Type: Article |
Times cited : (3)
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References (23)
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