X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Colombi, Paolo ^a   Bontempi, Elza ^a   Depero, Laura E ^a   Azuma, Yasushi ^b   Fujimoto, Toshiyuki ^b  

^a UNIVERSITY OF BRESCIA   (Italy)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC OXIDE; IRRADIATED SAMPLES; MAIN EFFECT; MULTI-LAYER SYSTEM; OXIDATION PROCESS; OXIDE PHASE; SATURATION VALUES; SURFACE OXIDE; TOTAL REFLECTION X-RAY FLUORESCENCE; TOTAL REFLECTION X-RAY FLUORESCENCE ANALYSIS; X RAY REFLECTIVITY; X-RAY EXPOSURE; X-RAY REFLECTOMETRY;

ARSENIC; CHEMICAL MODIFICATION; ELECTROMAGNETIC WAVE REFLECTION; FLUORESCENCE; GALLIUM; MULTILAYERS; PHASE INTERFACES;

X RAYS;

EID: 67649822153     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3054336     Document Type: Article

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