Field emission properties of Si tip arrays coated with N-doped SrTiO3 thin films at different substrate temperature

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Bian, H J ^a   Chen, X F ^b   Pan, J S ^c   Zhu, W ^a   Sun, Chang Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIBONDING; CHEMICAL STATE; CRITICAL TEMPERATURES; DIFFERENT SUBSTRATES; DIPOLE STATE; FIELD EMISSION PROPERTY; LONE PAIR; MOLECULAR ADSORPTION; N-DOPED; NITROGEN ATOM; SILICON TIP ARRAYS; SRTIO; SRTIO3 THIN FILMS; SUBSTRATE TEMPERATURE; SURFACE ENERGIES; SURFACE STRESS; THRESHOLD FIELDS;

ANGLE MEASUREMENT; CONTACT ANGLE; ENERGY GAP; FIELD EMISSION; GAS ADSORPTION; NITROGEN; OPTICAL BAND GAPS; OXIDE FILMS; STRONTIUM ALLOYS; SUBSTRATES; SURFACE CHEMISTRY; SURFACE TENSION; THERMAL EFFECTS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649780837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056180     Document Type: Article

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