Effect of annealing temperature on the electron emission characteristics of silicon tips coated with Ba0.67Sr0.33TiO3 thin film

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 453-457

  Kang, W P ^a   Wisitsora at, A ^a   Davidson, J L ^a   Tan, O K ^b   Zhu, W G ^b   Li, Q ^c   Xu, J F ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FERMI LEVEL; FERROELECTRIC THIN FILMS; IONIC CONDUCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SOL-GELS; THERMAL EFFECTS;

BARIUM STRONTIUM TITANATE; CONDUCTION BAND; ELECTRON TRAP DENSITY; INJECTION CURRENT;

ELECTRON EMISSION;

EID: 0037207754     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1516184     Document Type: Article

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