Microscopic field emission investigation of nanodiamond and AlN coated Si tips

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 942-945

  Gunther B ^a   Gohl A ^a   Muller G ^a   Givargizov, E ^b   Zadorozhnaya, L ^b   Stepanova, A ^b   Spitsyn, B ^c   Blaut Bachev, A N ^c   Seleznev, B ^d   Suetin, N ^d  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; FIELD EMISSION MICROSCOPES; INORGANIC COATINGS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

FIELD EMISSION SCANNING MICROSCOPY (FESM); NANAODIAMOND (ND) COATED TIP ARRAYS;

COLD CATHODE TUBES;

EID: 0035326439     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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