Electronic excitations induced modifications of structural and optical properties of ZnO-porous silicon nanocomposites

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 14, 2009, Pages 2399-2402

  Singh, R G ^a   Singh, Fouran ^b   Sulania, I ^b   Kanjilal, D ^b   Sehrawat, K ^a   Agarwal, V ^c   Mehra, R M ^a  

^a UNIVERSITY OF DELHI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

Ion irradiation and deep level defects; Nanocrystallites; Photoluminescence; ZnO

Indexed keywords

DEEP-LEVEL DEFECTS; DEFECTS INDUCED; ELECTRONIC EXCITATION; FLUENCE; FLUENCES; ION FLUENCE; ION IRRADIATION AND DEEP LEVEL DEFECTS; PHOTOLUMINESCENCE PROPERTIES; PL EMISSION; SILICON NANOCOMPOSITES; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL MODIFICATIONS; SWIFT HEAVY IONS; XRD PEAKS; ZNO;

CHEMICAL MODIFICATION; DEFECTS; GELATION; IRRADIATION; NANOCOMPOSITES; NANOCRYSTALLITES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; X RAY DIFFRACTION; ZINC OXIDE;

IONS;

EID: 67649613325     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.04.005     Document Type: Article

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