Ion beam analysis of thin doped ZnO layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 708-712

  Wielunski, Leszek S ^a   Hill, D H ^a   Quinn, J ^a   Bartynski, R A ^a   Wu, P ^a   Lu, Y ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Diffusion doping; Mg xZn1 xO; MnxZn1 xO; Ni xZn1 xO; Rutherford backscattering spectroscopy; Spintronics; VxZn1 xO; ZnO

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); ENERGY GAP; ION BEAMS; MAGNESIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; NICKEL COMPOUNDS; SILICON; VANADIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION DOPING; MGXZN1-XO; MNXZN1-XO; NIXZN1-XO; SPINTRONICS; VXZN1-XO;

ZINC OXIDE;

EID: 2342574878     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.147     Document Type: Conference Paper

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