Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Li, Hong Liang ^a   Zhu, Yingchun ^b   Xu, Dongsheng ^c   Wan, Yong ^a   Xia, Linhua ^a   Zhao, Xiu Song ^a  

^a QINGDAO UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMINE GROUPS; FOURIER TRANSFORM INFRARED; FT-IR SPECTRUM; OXIDIZED POROUS SILICON; P-SI LAYERS; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; SILANIZATION; SURFACE DERIVATIVES; TIME-RESOLVED PHOTOLUMINESCENCE; VAPOR PHASE; VAPOR PHASE DEPOSITION;

AMINES; CONTACT ANGLE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; POROUS SILICON; VAPORS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649522970     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133209     Document Type: Article

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