Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Kim, S P ^a   Lee, K R ^a   Chung, Y C ^b   Sahashi, M ^c   Kim, Y K ^d  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

^d Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; ATOMIC SCALE; ATOMIC STEP; CLASSICAL MOLECULAR DYNAMICS; CU SURFACES; CU(1 1 1); EHRLICH-SCHWOEBEL BARRIER; EXCHANGE PROCESS; HIGH-TEMPERATURE ANNEALING; INITIAL STAGES; MOLECULAR DYNAMICS SIMULATIONS;

ALUMINUM; ANNEALING; ATOMS; DYNAMICS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; SIMULATED ANNEALING; SURFACE ROUGHNESS; TANTALUM;

SURFACE DIFFUSION;

EID: 67649522959     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3142382     Document Type: Article

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