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Volumn 94, Issue 25, 2009, Pages

Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

(7) Motyka, M a Sek G a Ryczko, K a Misiewicz, J a Lehnhardt, T b Hofling S b Forchel, A b

a WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

b UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; EMISSION WAVELENGTH; ENERGY LEVEL; GAS SENSING APPLICATIONS; INAS; INTERBAND CASCADE LASER; KP MODELS; LAYER THICKNESS; MID-INFRARED RANGE; MIDINFRARED; PHOTOREFLECTANCE; ROOM TEMPERATURE; TEMPERATURE SHIFT; TEMPERATURE-DEPENDENT MEASUREMENTS; TYPE II; TYPE-II QUANTUM WELLS;

INDIUM ARSENIDE; OPTICAL PROPERTIES; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67649467466 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3157910 Document Type: Article

Times cited : (26)

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