Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Shterengas, L ^a   Belenky, G ^a   Kipshidze, G ^a   Hosoda, T ^a  

^a Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

ROOM TEMPERATURE;

SEMICONDUCTOR LASERS;

EID: 43049085499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2919720     Document Type: Article

References (10)

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