Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 80-84

  Kudrawiec, R ^a   Misiewicz, J ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Dilute nitrides; Hydrostatic pressure; Photoreflectance; SQW

Indexed keywords

ELECTRON TRANSITIONS; GROUND STATE; HYDROSTATIC PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

DILUTE NITRIDES; GROUND STATE TRANSITION; PHOTOREFLECTANCE (PR) SPECTROSCOPY; PRESSURE COEFFICIENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33750522256     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.073     Document Type: Article

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