Optical investigations of InGaAsN/GaAs single quantum well structures

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 489-492

  Sitarek, P ^a   Ryczko, K ^a   Sek, G ^a   Misiewicz, J ^a   Fischer, M ^b   Reinhardt, M ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

InGaAsN compound; Photoreflectance spectroscopy

Indexed keywords

NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037343624     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00400-8     Document Type: Conference Paper

References (11)

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