Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Solar Energy Materials and Solar Cells

Volumn 93, Issue 9, 2009, Pages 1572-1581

  Proskuryakov, Y Y ^a   Durose, K ^a   Major, J D ^a   Al Turkestani, M K ^a   Barrioz, V ^b   Irvine, S J C ^b   Jones, E W ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b BANGOR UNIVERSITY   (United Kingdom)

Author keywords

CdTe; Doping; Electrical properties; MOCVD; Thin film solar cells

Indexed keywords

CDTE; DOPING; ELECTRICAL PROPERTIES; MOCVD; THIN FILM SOLAR CELLS;

ARSENIC; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; CHLORINE; ELECTRIC PROPERTIES; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM TELLURIDE; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILM DEVICES; THIN FILMS;

DOPING (ADDITIVES);

EID: 67649389380     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.04.010     Document Type: Article

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