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Volumn 763, Issue , 2003, Pages 25-30
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A Study of Arsenic Dopant Concentration and Activity as a Function of Growth Conditions in Polycrystalline MOCVD-Grown CdTe
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR DOPING;
CLOSE SPACE SUBLIMATION;
POST-DEPOSITION ANNEALING;
SEMICONDUCTING CADMIUM COMPOUNDS;
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EID: 0345359209
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-763-b1.5 Document Type: Conference Paper |
Times cited : (2)
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References (14)
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