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Volumn 763, Issue , 2003, Pages 25-30

A Study of Arsenic Dopant Concentration and Activity as a Function of Growth Conditions in Polycrystalline MOCVD-Grown CdTe

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING;

EID: 0345359209     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b1.5     Document Type: Conference Paper
Times cited : (2)

References (14)
  • 8
    • 0032108540 scopus 로고    scopus 로고
    • U.V. Desnica. Vacuum 50(3-4) (1998) 463-471.
    • (1998) Vacuum , vol.50 , Issue.3-4 , pp. 463-471
    • Desnica, U.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.