Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

Organic Electronics

Volumn 10, Issue 5, 2009, Pages 895-900

  Zhang, Ying ^a   Seo, Hoon Seok ^a   An, Min Jun ^a   Choi, Jong Ho ^a  

^a Korea University   (South Korea)

Author keywords

Hexamethyldisilazane (HMDS); N,N Ditridecylperylene 3,4,9,10 tetracarboxylic diimide (P13); n Type field effect transistors; Neutral cluster beam deposition (NCBD); Temperature dependence of field effect mobility

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; PASSIVATION; SURFACE TREATMENT; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS;

DIIMIDE; FIELD-EFFECT MOBILITIES; HEXAMETHYLDISILAZANE; NEUTRAL CLUSTERS; OPERATIONAL STABILITY; ORGANIC THIN FILM TRANSISTORS; THERMAL POST-TREATMENTS; TOP CONTACT STRUCTURES;

FIELD EFFECT TRANSISTORS;

EID: 67649343933     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.04.017     Document Type: Article

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